Improvement of High Speed Performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
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چکیده
We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ~0.4 mA, and slope efficiencies ~ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ~30% when the substrate temperature is raised from room temperature to 85C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25C to 85C.
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تاریخ انتشار 2004